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| Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13005 HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------- 55~150ae T j Junction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------75W VCBO Collector-Base Voltage----------700V VCEOCollector-Emitter Voltage---------400V VEBO Emitter-Base Voltage-----------9V ICCollector Current DC------------ (c) 4A ICCollector Current Pulse(c)-----------8A TO-220 1D Base B 2D Collector C 3D Emitter, E IB Current----------------Base 2A cIEy=25ae Ta (c) Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO IEBO HFE Collector-Emitter Sustaining Voltage Emitter-Base Cut-off Current DC Current Gain 400 1 10 8 40 40 0.5 0.6 1 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A VCE(sat) Collector- Emitter Saturation Voltage V V V V V pF MHz IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A IC=1A, IB =0.2A IC=2A, IB =0.5A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=2A, IB1 =-IB2 =0.4A VBE(sat) Base- Emitter Saturation Voltage Cob fT tON tS tF Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 65 1.2 1.6 0.8 4 0.9 |I s |I s |I s hFE Classification H1 10--16(c) H2 14--21(c) H3 19--26(c) H4 24--31(c) H5 29--40(c) |
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